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| PTF 10137 12 Watts, 1.0 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Performance at 960 MHz, 28 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability * * * * Typical Output Power & Efficiency vs. Input Power 20 Efficiency (%) 80 * Output Power (Watts) 15 60 VDD = 28 V 10 Efficiency IDQ = 160 mA f = 960 MHz Output Power (W) 40 A-1 234 101 37 5 699 42 5 20 0 0.0 0.2 0.4 0.6 0 Input Power (Watts) Package 20244 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 160 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB h Y Min 16.5 12 55 -- Typ 18 15 60 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10137 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 0.9 Max -- 1 5.0 -- Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 58 0.33 -40 to 150 3.0 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Broadband Test Fixture Performance 20 80 Gain (dB) 70 60 Efficiency (%) 50 40 30 Output Power (W) 20 80 Gain (dB) 16 70 Efficiency (%) 12 18 17 16 Output Power & Efficiency Gain 15 14 13 12 11 840 880 920 Gain IDQ = 160 mA IDQ = 160 mA 8 -10 50 Return Loss (dB) -20 POUT = 12 W 960 10 1000 4 960 970 980 990 40 1000 Frequency (MHz) Frequency (MHz) 2 Return Loss VDD = 28 V VDD = 28 V 60 Efficiency Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency e Power Gain vs. Output Power 19 18 20 PTF 10137 Output Power vs. Supply Voltage Output Power (Watts) IDQ = 160 mA 18 16 14 12 10 Power Gain (dB) 17 IDQ = 80 mA 16 15 14 0.1 1.0 10.0 100.0 IDQ = 40 mA VDD = 28 V f = 960 MHz IDQ = 160 mA f = 960 MHz 24 26 28 30 32 Output Power (Watts) Supply Voltage (Volts) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) 0 -10 70 Capacitance vs. Supply Voltage 6 5 60 50 40 30 20 10 f1 =960.0 MHz, f2 = 960.1 MHz 3rd Order Cds and Cgs (pF) VDD = 28 V, IDQ = 160 mA IMD (dBc) -20 -30 Cgs Crss Cds 0 10 20 30 40 3 2 1 0 5th -40 7th -50 -60 0 5 10 15 20 Output Power (Watts-PEP) Supply Voltage (Volts) Bias Voltage vs. Temperature 1.03 1.02 Voltage normalized to 1.0 V Series show current (A) Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100 0.075 0.585 1.095 0.33 0.84 1.35 Temp. (C) 3 Crss (pF) VGS = 0 V f = 1 MHz 4 PTF 10137 Impedance Data Z Source D e Z Load Z0 = 50 W -> RA T O R -- VDD = 28 V, IDQ = 160 mA, P-1dB = 18 W G S RD G E NE S TOW A - WAVELENG TH Frequency MHz 840 860 880 900 920 940 960 980 1000 Z Source W R 1.1 0.8 0.8 0.7 0.6 0.8 1.1 1.6 1.6 jX 1.9 0.8 0.1 -0.3 -0.7 -0.9 -1.2 -1.2 -0.9 R 4.1 3.8 3.7 3.6 4.1 4.3 4.8 5.3 5.0 Z Load W jX 4.3 3.3 2.8 2.3 2.1 2.0 1.6 2.6 3.7 Z Source 840 MHz 0.0 0.1 0.2 LOAD S TO WA RD NGTH 1000 MHz 0.1 Typical Scattering Parameters (VDS = 28 V, ID = 450 mA) f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 Mag 0.862 0.866 0.872 0.881 0.888 0.896 0.905 0.910 0.920 0.927 0.932 0.940 0.942 0.948 0.953 0.955 0.958 0.961 0.963 0.967 0.967 0.967 0.970 0.970 0.972 0.973 0.978 0.978 0.981 0.981 0.982 0.983 0.983 0.983 0.983 0.981 0.981 0.981 0.981 0.981 0.979 0.979 0.975 S11 Ang -126 -135 -146 -153 -157 -161 -164 -166 -168 -169 -171 -173 -174 -175 -177 -178 -179 -180 179 178 177 176 175 174 173 172 172 171 170 169 168 167 167 166 165 164 163 162 161 161 160 159 158 Mag 25.8 21.1 15.5 12.0 9.57 7.86 6.55 5.53 4.74 4.09 3.57 3.15 2.79 2.49 2.23 2.01 1.83 1.66 1.52 1.39 1.27 1.18 1.09 1.01 0.943 0.874 0.825 0.772 0.729 0.689 0.647 0.615 0.580 0.549 0.525 0.499 0.478 0.454 0.431 0.414 0.395 0.382 0.371 S21 Ang 101 93.6 80.9 71.6 63.7 57.0 51.0 45.7 40.8 36.6 32.4 28.9 25.5 22.1 19.3 16.2 13.6 11.1 8.52 6.44 4.07 1.96 0.12 -2.03 -3.66 -5.57 -7.37 -8.77 -10.7 -12.1 -13.9 -15.7 -16.9 -18.7 -20.3 -21.8 -23.4 -24.3 -26.0 -27.3 -28.6 -30.0 -30.7 4 Mag 0.018 0.018 0.018 0.017 0.016 0.015 0.013 0.012 0.011 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.003 0.003 0.003 0.004 0.004 0.005 0.006 0.006 0.007 0.008 0.009 0.009 0.010 0.011 0.012 0.013 0.013 0.014 0.015 0.015 0.016 0.017 0.018 0.018 0.019 0.019 0.020 S12 < AV -- - W E LE Ang 11.5 3.96 -5.92 -13.4 -19.1 -24.0 -27.9 -31.0 -32.8 -34.0 -35.0 -34.2 -32.7 -27.9 -20.5 -8.60 10.9 32.3 47.7 57.8 63.1 68.8 70.7 73.2 74.5 75.7 75.8 76.4 76.6 77.2 76.3 75.0 74.7 74.4 74.7 74.0 72.9 72.1 71.3 71.3 70.8 69.8 69.1 Mag 0.575 0.583 0.587 0.613 0.646 0.679 0.713 0.742 0.770 0.792 0.813 0.834 0.849 0.865 0.874 0.884 0.896 0.902 0.912 0.917 0.921 0.929 0.932 0.937 0.943 0.943 0.950 0.948 0.952 0.958 0.958 0.966 0.964 0.961 0.962 0.958 0.967 0.967 0.967 0.969 0.963 0.969 0.969 S22 Ang -78.7 -86.4 -97.4 -106 -113 -119 -124 -129 -133 -137 -141 -144 -147 -150 -152 -155 -157 -159 -161 -162 -164 -166 -167 -169 -170 -172 -173 -174 -176 -177 -178 -179 -180 179 178 176 175 175 173 173 172 170 169 0.3 0.2 Z Load 0.1 840 MHz 1000 MHz e Test Circuit PTF 10137 Test Circuit Schematic for f = 960 MHz DUT l1, l6 l2 l3 l4 l5 PTF 10137 0.197 l 960 MHz 0.018 l 960 MHz 0.184 l 960 MHz 0.047 l 960 MHz Microstrip 50 W Microstrip 10 W Microstrip 44 W Microstrip 12.7 W Microstrip 50 W C1 C2,C4,C5,C8 C3,C6 C7 C9, C10 R1, R2 L1,L2 Circuit Board ATC 100 B Capacitor, 8.2 pF, ATC 100 B ATC 100 B Capacitor, 36 pF, ATC 100 B Digi-Key P4525-ND Capacitor, 0.1 mF, 50V Digi-Key P5182-ND Capacitor, 100 mF, 50V ATC 100 B 2.0 pF Capacitor, ATC 100 B Digi-Key 2.2 QBK Resistor, 220 W, 1/4W N/A 4 Turn, 20 AWG, .120 I.D. .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Assembly Diagram (not to scale) 5 PTF 10137 Test Circuit e Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1999 Ericsson Inc. EUS/KR 1301-PTF 10137 Uen Rev. A 10-28-99 6 |
Price & Availability of PTF10137
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